Polycrystalline Silicon Produced by Joule-Heating Induced Crystallization
نویسنده
چکیده
An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Complete crystallization was observed via Joule heating under typical processing conditions. Crystallization was accomplished throughout the sample within the range of microseconds of the heating, thus demonstrating the possibility of a crystallization route for amorphous silicon films at room temperature. Keywords— AMOLED, Crystallization, Joule heating, Polycrystalline silicon, Phase transformation
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